Infineon Technologies IPG20N06S2L35ATMA1
- IPG20N06S2L35ATMA1
- Infineon Technologies
- MOSFET 2N-CH 55V 20A 8TDSON
- Transistors - FETs, MOSFETs - Arrays
- IPG20N06S2L35ATMA1 Datasheet
- 8-PowerVDFN
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 2494
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPG20N06S2L35ATMA1 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 55V 20A 8TDSON |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101, OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package PG-TDSON-8-4 |
Power - Max 65W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 55V |
Current - Continuous Drain (Id) @ 25°C 20A |
Rds On (Max) @ Id, Vgs 35mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2V @ 27µA |
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V |
Package_case 8-PowerVDFN |
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