IPG20N06S4L26ATMA1

Infineon Technologies IPG20N06S4L26ATMA1

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  • IPG20N06S4L26ATMA1
  • Infineon Technologies
  • MOSFET 2N-CH 60V 20A TDSON-8
  • Transistors - FETs, MOSFETs - Arrays
  • IPG20N06S4L26ATMA1 Datasheet
  • 8-PowerVDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 20819
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPG20N06S4L26ATMA1
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 60V 20A TDSON-8
Package
Cut Tape (CT)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4
Power - Max
33W
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
26mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1430pF @ 25V
Package_case
8-PowerVDFN

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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