Infineon Technologies IPG20N10S4L22AATMA1
- IPG20N10S4L22AATMA1
- Infineon Technologies
- MOSFET 2N-CH 100V 20A TDSON-8
- Transistors - FETs, MOSFETs - Arrays
- IPG20N10S4L22AATMA1 Datasheet
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 2532
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPG20N10S4L22AATMA1 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 100V 20A TDSON-8 |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount, Wettable Flank |
Package / Case 8-PowerVDFN |
Supplier Device Package PG-TDSON-8-10 |
Power - Max 60W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 20A |
Rds On (Max) @ Id, Vgs 22mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V |
Package_case 8-PowerVDFN |
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Infineon Technologies
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