Infineon Technologies IPG20N10S4L35AATMA1
- IPG20N10S4L35AATMA1
- Infineon Technologies
- MOSFET 2N-CH 100V 20A 8TDSON
- Transistors - FETs, MOSFETs - Arrays
- IPG20N10S4L35AATMA1 Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 800
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPG20N10S4L35AATMA1 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 100V 20A 8TDSON |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101, OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount, Wettable Flank |
Package / Case 8-PowerVDFN |
Supplier Device Package PG-TDSON-8-10 |
Power - Max 43W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 20A |
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id 2.1V @ 16µA |
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V |
Package_case 8-PowerVDFN |
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Infineon Technologies
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Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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