IPI100N04S303MATMA2 Product Introduction:
Infineon Technologies Part Number IPI100N04S303MATMA2(Transistors - FETs, MOSFETs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
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Introducing the Infineon Technologies IPI100N04S303MATMA2, a cutting-edge power MOSFET designed to revolutionize the world of electronics. With its advanced features and exceptional performance, this product is set to redefine power management in various applications.
The IPI100N04S303MATMA2 boasts a low on-resistance of just 4.3mΩ, ensuring minimal power loss and maximum efficiency. This, combined with its high current rating of 100A, makes it an ideal choice for high-power applications. Additionally, its low gate charge and fast switching speed enable seamless operation, reducing switching losses and enhancing overall system performance.
This power MOSFET is specifically designed for use in a wide range of applications, including motor control, power supplies, and battery management systems. Its robust construction and high reliability make it suitable for demanding environments, ensuring long-term performance and durability.
The IPI100N04S303MATMA2 also features a compact and lightweight design, making it easy to integrate into existing systems. Its low thermal resistance and excellent thermal management capabilities ensure efficient heat dissipation, preventing overheating and extending the lifespan of the device.
Infineon Technologies has once again raised the bar with the IPI100N04S303MATMA2, offering unparalleled performance and reliability in power management. Whether you're designing a motor control system or a power supply unit, this power MOSFET is the perfect choice to meet your needs. Experience the future of power management with the Infineon Technologies IPI100N04S303MATMA2.
FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.
Application
FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.
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Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i