Infineon Technologies IPN70R2K0P7SATMA1
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- IPN70R2K0P7SATMA1
- Infineon Technologies
- MOSFET N-CH 700V 3A SOT223
- Transistors - FETs, MOSFETs - Single
- IPN70R2K0P7SATMA1 Datasheet
- TO-261-4, TO-261AA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 770
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number IPN70R2K0P7SATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 700V 3A SOT223 |
| Package Cut Tape (CT) |
| Series CoolMOS™ P7 |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-261-4, TO-261AA |
| Supplier Device Package PG-SOT223 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 6W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 700 V |
| Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
| Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 400 V |
| Vgs (Max) ±16V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-261-4, TO-261AA |
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