Infineon Technologies IPP023NE7N3 G
- IPP023NE7N3 G
- Infineon Technologies
- MOSFET N-CH 75V 120A TO220
- Transistors - FETs, MOSFETs - Single
- IPP023NE7N3 G Datasheet
- TO-220-3
- TO-220-3
- Lead free / RoHS Compliant
- 17494
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPP023NE7N3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 75V 120A TO220 |
Package TO-220-3 |
Series OptiMOS? |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package PG-TO220-3-1 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 75V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 3.8V @ 273µA |
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case TO-220-3 |
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