Infineon Technologies IPP086N10N3GHKSA1
- IPP086N10N3GHKSA1
- Infineon Technologies
- MOSFET N-CH 100V 80A TO220-3
- Transistors - FETs, MOSFETs - Single
- IPP086N10N3GHKSA1 Datasheet
- TO-220-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1622
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPP086N10N3GHKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 80A TO220-3 |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package PG-TO220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 75µA |
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-220-3 |
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