IPP80N04S2-H4 Product Introduction:
Infineon Technologies Part Number IPP80N04S2-H4(Transistors - FETs, MOSFETs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IPP80N04S2-H4 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies IPP80N04S2-H4, a cutting-edge power MOSFET designed to revolutionize the world of electronics. With its exceptional features and versatile application fields, this product is set to redefine power management systems.
The IPP80N04S2-H4 boasts an impressive low on-resistance of just 4mΩ, ensuring minimal power loss and maximum efficiency. This makes it ideal for high-current applications, such as motor control, power supplies, and battery management systems. Its high current handling capability of up to 80A allows for seamless operation even in demanding environments.
Equipped with a robust and reliable design, the IPP80N04S2-H4 offers enhanced thermal performance, ensuring optimal heat dissipation and preventing overheating. This feature guarantees the longevity and reliability of the product, making it a trusted choice for industrial and automotive applications.
Furthermore, the IPP80N04S2-H4 is designed with a low gate charge, enabling faster switching speeds and reducing power dissipation. This feature enhances overall system performance and efficiency, making it an excellent choice for applications that require high-speed switching.
With its exceptional features and versatile application fields, the Infineon Technologies IPP80N04S2-H4 is set to revolutionize power management systems. Whether it's in industrial automation, automotive systems, or renewable energy, this power MOSFET is the ultimate solution for efficient and reliable power control. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations.
FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.
Application
FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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