Infineon Technologies IPW60R190E6
- IPW60R190E6
- Infineon Technologies
- MOSFET N-CH 600V 20.2A TO247
- Transistors - FETs, MOSFETs - Single
- IPW60R190E6 Datasheet
- TO-247-3
- TO-247-3
- Lead free / RoHS Compliant
- 3995
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPW60R190E6 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 600V 20.2A TO247 |
Package TO-247-3 |
Series CoolMOS? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package PG-TO247-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 151W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 600V |
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) |
Rds On (Max) @ Id, Vgs 190 mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 630µA |
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case TO-247-3 |
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Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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