IRF3703PBF

Infineon Technologies IRF3703PBF

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  • IRF3703PBF
  • Infineon Technologies
  • MOSFET N-CH 30V 210A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • IRF3703PBF Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2718
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IRF3703PBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 210A TO220AB
Package
Tube
Series
HEXFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 230W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
210A (Tc)
Rds On (Max) @ Id, Vgs
2.8mOhm @ 76A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8250 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Package_case
TO-220-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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