IRF630NLPBF

Infineon Technologies IRF630NLPBF

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  • IRF630NLPBF
  • Infineon Technologies
  • MOSFET N-CH 200V 9.3A TO262
  • Transistors - FETs, MOSFETs - Single
  • IRF630NLPBF Datasheet
  • TO-262-3 Long Leads, I²Pak, TO-262AA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2574
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IRF630NLPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 200V 9.3A TO262
Package
Tube
Series
HEXFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
TO-262
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
82W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-262-3 Long Leads, I²Pak, TO-262AA

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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