Infineon Technologies IRF9Z34NLPBF
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- IRF9Z34NLPBF
- Infineon Technologies
- MOSFET P-CH 55V 19A TO262
- Transistors - FETs, MOSFETs - Single
- IRF9Z34NLPBF Datasheet
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
-
Lead free / RoHS Compliant - 4355
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number IRF9Z34NLPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET P-CH 55V 19A TO262 |
| Package Tube |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package TO-262 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.8W (Ta), 68W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 55 V |
| Current - Continuous Drain (Id) @ 25°C 19A (Tc) |
| Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
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