Infineon Technologies IRFB3307PBF
- IRFB3307PBF
- Infineon Technologies
- MOSFET N-CH 75V 130A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFB3307PBF Datasheet
- TO-220-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 1397
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFB3307PBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 75V 130A TO220AB |
Package Cut Tape (CT) |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 200W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 75 V |
Current - Continuous Drain (Id) @ 25°C 130A (Tc) |
Rds On (Max) @ Id, Vgs 6.3mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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