IRFBE30STRLPBF

Vishay Siliconix IRFBE30STRLPBF

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  • IRFBE30STRLPBF
  • Vishay Siliconix
  • MOSFET N-CH 800V 4.1A D2PAK
  • Transistors - FETs, MOSFETs - Single
  • IRFBE30STRLPBF Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25592
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IRFBE30STRLPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 800V 4.1A D2PAK
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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