IRFD123

Harris Corporation IRFD123

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  • IRFD123
  • Harris Corporation
  • MOSFET N-CH 100V 1.3A 4DIP
  • Transistors - FETs, MOSFETs - Single
  • IRFD123 Datasheet
  • 4-DIP (0.300\", 7.62mm)
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4587
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IRFD123
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Harris Corporation
Description
MOSFET N-CH 100V 1.3A 4DIP
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
4-DIP (0.300\", 7.62mm)
Supplier Device Package
4-HVMDIP
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Rds On (Max) @ Id, Vgs
270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
4-DIP (0.300\", 7.62mm)

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