Vishay Siliconix IRFD224
- IRFD224
- Vishay Siliconix
- MOSFET N-CH 250V 630MA 4-DIP
- Transistors - FETs, MOSFETs - Single
- IRFD224 Datasheet
- 4-DIP (0.300", 7.62mm)
- 4-DIP (0.300", 7.62mm)
-
Lead free / RoHS Compliant
- 4076
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFD224 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 250V 630MA 4-DIP |
Package 4-DIP (0.300", 7.62mm) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-DIP (0.300", 7.62mm) |
Supplier Device Package 4-DIP, Hexdip, HVMDIP |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 250V |
Current - Continuous Drain (Id) @ 25°C 630mA (Ta) |
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 380mA, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) ±20V |
Package_case 4-DIP (0.300", 7.62mm) |
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