Infineon Technologies IRFU9N20D
- IRFU9N20D
- Infineon Technologies
- MOSFET N-CH 200V 9.4A IPAK
- Transistors - FETs, MOSFETs - Single
- IRFU9N20D Datasheet
- TO-251-3 Short Leads, IPak, TO-251AA
- Tube
- Lead free / RoHS Compliant
- 28229
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFU9N20D |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 200V 9.4A IPAK |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package IPAK (TO-251AA) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 86W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc) |
Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-251-3 Short Leads, IPak, TO-251AA |
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