Fairchild Semiconductor IRFW630BTM_FP001
- IRFW630BTM_FP001
- Fairchild Semiconductor
- 9A, 200V, 0.4OHM, N-CHANNEL
- Transistors - FETs, MOSFETs - Single
- IRFW630BTM_FP001 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
Lead free / RoHS Compliant
- 4421
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFW630BTM_FP001 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description 9A, 200V, 0.4OHM, N-CHANNEL |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D2PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.13W (Ta), 72W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 9A (Tc) |
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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