IRGC4061B Product Introduction:
Infineon Technologies Part Number IRGC4061B(Transistors - IGBTs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IRGC4061B is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies IRGC4061B, a cutting-edge power module designed to revolutionize the field of industrial applications. With its advanced features and exceptional performance, this product is set to redefine power management systems.
The IRGC4061B boasts a compact design, making it ideal for space-constrained environments. Its high power density allows for efficient power conversion, ensuring optimal performance and energy savings. Equipped with advanced protection features, such as overcurrent and overvoltage protection, this power module guarantees the safety and reliability of your system.
This product is specifically designed for a wide range of industrial applications. From motor drives and renewable energy systems to uninterruptible power supplies and welding equipment, the IRGC4061B is versatile enough to meet the demands of various industries. Its robust construction ensures durability and longevity, making it suitable for harsh operating conditions.
The IRGC4061B also offers easy integration into existing systems, thanks to its standardized package and pin configuration. This simplifies the design process and reduces time-to-market for manufacturers. Additionally, its high thermal conductivity ensures efficient heat dissipation, preventing overheating and extending the lifespan of the module.
In conclusion, the Infineon Technologies IRGC4061B is a game-changer in the field of power management. With its advanced features, compact design, and wide range of applications, this power module is set to revolutionize industrial systems. Experience the future of power management with the IRGC4061B.
UGBT (Unipolar Insulated Gate Bipolar Transistor) is a new power electronic device based on improved MOSFET technology, combining the fast switching characteristics of MOSFET and the high power processing capability of IGBT. UGBT is designed to provide higher switching speeds, lower on-off losses and better thermal performance. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a commonly used field-effect transistor with low input current, high input impedance and good linearity, making it the preferred device in many electronic circuits.
Application
UGBT (hypothetical) and MOSFET show extraordinary potential and value in their respective application fields. UGBT may dominate those industries that have the ultimate pursuit of power electronic system performance, such as new energy vehicles, smart grids, aerospace, etc., and its efficient energy conversion and control characteristics provide a strong impetus for technological innovation in these fields. MOSFET, because of its wide applicability and flexibility, has penetrated into almost every corner of electronic technology, from consumer electronics and communications equipment to industrial automation and medical electronics, highlighting its importance everywhere. In consumer electronics, MOSFETs help enable longer battery life, faster charging speeds, and more efficient energy management. In industry, they are a key force in driving motors, controlling robots and optimizing the efficiency of production lines.
FAQ about Transistors - IGBTs - Single
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1. What is the difference between igbt single tube and module?
The main differences between IGBT single tubes and modules are packaging form, current withstanding capability, application scenarios and thermal conductivity performance.
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2. What is the difference between MOS tube and IGBT tube?
IGBT generally has a high voltage rating and strong current resistance, but has high switching losses. Therefore, IGBT is mainly used in high-voltage and high-power applications.
MOSFET has lower voltage and current resistance than IGBT, but its switching loss is small, so the frequency can be higher. Therefore, MOSFET is mainly used in low-voltage, low-power and high-frequency applications.
If you are making a 220V converter, such as a switching power supply, you can choose MOSFET; if you work on the power grid, many 10kV grid-connected equipment uses IGBT.
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3. Is an IGBT tube considered a triode?
Broadly speaking, IGBT can also be said to be a triode, which is a special triode.