Infineon Technologies IRL100HS121
- IRL100HS121
- Infineon Technologies
- MOSFET N-CH 100V 11A 6PQFN
- Transistors - FETs, MOSFETs - Single
- IRL100HS121 Datasheet
- 6-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3827
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRL100HS121 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 11A 6PQFN |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-PowerVDFN |
Supplier Device Package 6-PQFN Dual (2x2) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 11.5W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 11A (Tc) |
Rds On (Max) @ Id, Vgs 42mOhm @ 6.7A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 6-PowerVDFN |
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