Infineon Technologies ISC0603NLSATMA1
- ISC0603NLSATMA1
- Infineon Technologies
- TRENCH 40<-<100V PG-TDSON-8
- Transistors - FETs, MOSFETs - Single
- ISC0603NLSATMA1 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4737
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number ISC0603NLSATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description TRENCH 40<-<100V PG-TDSON-8 |
Package Cut Tape (CT) |
Series OptiMOS™ 5 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 52W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 80 V |
Current - Continuous Drain (Id) @ 25°C 12.3A (Ta), 56A (Tc) |
Rds On (Max) @ Id, Vgs 8.9mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 24µA |
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 40 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN |
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