ISC0806NLSATMA1

Infineon Technologies ISC0806NLSATMA1

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  • ISC0806NLSATMA1
  • Infineon Technologies
  • TRENCH >=100V PG-TDSON-8
  • Transistors - FETs, MOSFETs - Single
  • ISC0806NLSATMA1 Datasheet
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19481
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
ISC0806NLSATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
TRENCH >=100V PG-TDSON-8
Package
Cut Tape (CT)
Series
OptiMOS™ 5
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-7
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 96W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs
5.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.3V @ 61µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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