IXYS IXTQ34N65X2M
- IXTQ34N65X2M
- IXYS
- DISCRETE MOSFET 34A 650V X2 TO3P
- Transistors - FETs, MOSFETs - Single
- IXTQ34N65X2M Datasheet
- TO-3P-3, SC-65-3
- Tube
-
Lead free / RoHS Compliant
- 8392
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXTQ34N65X2M |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description DISCRETE MOSFET 34A 650V X2 TO3P |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3P |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 43W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 34A (Tc) |
Rds On (Max) @ Id, Vgs 96mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-3P-3, SC-65-3 |
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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