Microsemi Corporation JAN2N6766
- JAN2N6766
- Microsemi Corporation
- MOSFET N-CH 200V 30A TO3
- Transistors - FETs, MOSFETs - Single
- JAN2N6766 Datasheet
- TO-204AE
- Bulk
-
Lead free / RoHS Compliant
- 29403
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number JAN2N6766 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Microsemi Corporation |
Description MOSFET N-CH 200V 30A TO3 |
Package Bulk |
Series Military, MIL-PRF-19500/543 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-204AE |
Supplier Device Package TO-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 4W (Ta), 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 30A (Tc) |
Rds On (Max) @ Id, Vgs 90mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-204AE |
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