IXYS MIEB101H1200EH
- MIEB101H1200EH
- IXYS
- IGBT MODULE 1200V 183A 630W E3
- Transistors - IGBTs - Modules
- MIEB101H1200EH Datasheet
- E3
- Box
-
Lead free / RoHS Compliant
- 1042
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MIEB101H1200EH |
Category Transistors - IGBTs - Modules |
Manufacturer IXYS |
Description IGBT MODULE 1200V 183A 630W E3 |
Package Box |
Series - |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Chassis Mount |
Package / Case E3 |
Supplier Device Package E3 |
Power - Max 630 W |
Configuration Full Bridge Inverter |
Current - Collector (Ic) (Max) 183 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 300 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A |
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case E3 |
MIEB101H1200EH Guarantees
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IXYS
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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