NTE Electronics, Inc MJ10012
- MJ10012
- NTE Electronics, Inc
- T-NPN SI- PO DARL SW
- Transistors - Bipolar (BJT) - Single
- MJ10012 Datasheet
- TO-204AA, TO-3
- Bag
- Lead free / RoHS Compliant
- 9361
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MJ10012 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer NTE Electronics, Inc |
Description T-NPN SI- PO DARL SW |
Package Bag |
Series - |
Operating Temperature -65°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-204AA, TO-3 |
Supplier Device Package TO-3 |
Power - Max 175 W |
Transistor Type NPN - Darlington |
Current - Collector (Ic) (Max) 10 A |
Voltage - Collector Emitter Breakdown (Max) 400 V |
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A |
Current - Collector Cutoff (Max) 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 3A, 6V |
Frequency - Transition - |
Package_case TO-204AA, TO-3 |
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