MMRF1017NR3 Product Introduction:
NXP USA Inc. Part Number MMRF1017NR3(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MMRF1017NR3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MMRF1017NR3, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the MMRF1017NR3 is set to revolutionize the industry.
Featuring a compact and robust design, this power transistor delivers an impressive output power of up to 17 watts, making it ideal for a wide range of applications. Whether it's in cellular base stations, wireless infrastructure, or broadcast systems, the MMRF1017NR3 ensures reliable and efficient performance.
One of the standout features of the MMRF1017NR3 is its high linearity, which enables it to maintain signal integrity even in the presence of complex modulation schemes. This makes it perfect for applications that require high data rates and low distortion, such as 4G and 5G wireless systems.
Furthermore, the MMRF1017NR3 boasts excellent thermal stability, ensuring reliable operation even in challenging environments. Its advanced thermal management capabilities allow for continuous operation at high power levels, without compromising on performance.
With its exceptional power output, efficiency, and reliability, the MMRF1017NR3 is the go-to choice for engineers and designers in the wireless communication industry. Experience the future of RF power transistors with NXP USA Inc.'s MMRF1017NR3.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
What is MOSFET and its working principle and application
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an electronic device that controls current by forming a metal oxide layer as a dielectric on a semiconductor. The working principle of MOSFET is based on the control of semiconductor conductivity by electric field.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.