MMRF1314HSR5 Product Introduction:
NXP USA Inc. Part Number MMRF1314HSR5(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MMRF1314HSR5 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MMRF1314HSR5, the latest innovation from NXP USA Inc. This high-power RF transistor is designed to deliver exceptional performance and reliability in a wide range of applications. With its advanced features and cutting-edge technology, the MMRF1314HSR5 is set to revolutionize the RF industry.
One of the standout features of the MMRF1314HSR5 is its high power capability. With a maximum output power of 14W, this transistor is capable of handling even the most demanding RF applications. This makes it ideal for use in high-power amplifiers, transmitters, and other RF systems.
In addition to its impressive power capability, the MMRF1314HSR5 also offers excellent linearity and efficiency. This means that it can deliver high-quality RF signals with minimal distortion, ensuring optimal performance in any application.
The MMRF1314HSR5 is also highly versatile, making it suitable for a wide range of application fields. Whether it's in telecommunications, aerospace, or industrial applications, this transistor can deliver reliable and efficient RF performance.
With its exceptional power capability, excellent linearity, and versatility, the MMRF1314HSR5 is set to become the go-to choice for RF engineers and designers. Experience the future of RF technology with NXP USA Inc.'s MMRF1314HSR5.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an electronic device that controls current by forming a metal oxide layer as a dielectric on a semiconductor. The working principle of MOSFET is based on the control of semiconductor conductivity by electric field.
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