MRF5P21180HR5 Product Introduction:
NXP USA Inc. Part Number MRF5P21180HR5(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF5P21180HR5 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF5P21180HR5, the latest innovation from NXP USA Inc. This high-power RF transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional performance and reliability, the MRF5P21180HR5 is set to revolutionize the industry.
Featuring a power output of 180 watts, this transistor delivers unmatched power density, making it ideal for applications that require high output power. Its high gain and efficiency ensure optimal performance, even in the most challenging environments. The MRF5P21180HR5 also boasts excellent linearity, enabling seamless integration into complex communication systems.
This versatile transistor is suitable for a wide range of applications, including cellular base stations, wireless infrastructure, and radar systems. Its robust design and advanced thermal management capabilities ensure reliable operation even in extreme conditions. The MRF5P21180HR5 is also highly efficient, helping to reduce power consumption and operating costs.
NXP USA Inc. has a long-standing reputation for delivering cutting-edge solutions, and the MRF5P21180HR5 is no exception. With its exceptional performance, reliability, and versatility, this transistor is set to redefine the standards of high-power RF transistors. Experience the future of wireless communication with the MRF5P21180HR5 from NXP USA Inc.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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