MRF5S19060MBR1 Product Introduction:
NXP USA Inc. Part Number MRF5S19060MBR1(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF5S19060MBR1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF5S19060MBR1, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the MRF5S19060MBR1 is the perfect solution for a wide range of applications.
Featuring a frequency range of 1930 to 1990 MHz, this transistor delivers an impressive output power of 60 watts, making it ideal for use in cellular base stations, repeaters, and other wireless infrastructure equipment. Its high gain and low distortion characteristics ensure reliable and clear signal transmission, even in challenging environments.
The MRF5S19060MBR1 is built using NXP's advanced LDMOS technology, which provides excellent thermal stability and ruggedness. This ensures consistent performance and long-term reliability, even under extreme operating conditions.
With its compact size and easy integration, this transistor offers flexibility in system design and reduces overall system costs. Its high efficiency also helps to minimize power consumption, making it an environmentally friendly choice.
Whether you are designing a cellular network, a wireless communication system, or any other RF application, the MRF5S19060MBR1 is the perfect choice. Trust NXP USA Inc. for cutting-edge technology and superior performance.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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