MRF5S19060MR1 Product Introduction:
NXP USA Inc. Part Number MRF5S19060MR1(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF5S19060MR1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF5S19060MR1, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the MRF5S19060MR1 is the perfect solution for a wide range of applications.
Featuring a frequency range of 1930 to 1990 MHz, this power transistor delivers an impressive output power of 60 watts, making it ideal for use in cellular base stations, repeaters, and other wireless infrastructure equipment. Its high gain and low distortion characteristics ensure reliable and clear signal transmission, even in challenging environments.
The MRF5S19060MR1 also boasts excellent thermal stability, thanks to its advanced thermal management system. This ensures optimal performance and reliability, even during prolonged operation. Additionally, its compact and lightweight design allows for easy integration into existing systems, saving both time and resources.
With its exceptional power output, efficiency, and reliability, the MRF5S19060MR1 is the go-to choice for wireless communication systems. Whether it's enhancing cellular network coverage, improving signal quality, or expanding wireless infrastructure, this power transistor delivers unmatched performance.
Trust NXP USA Inc. to provide you with cutting-edge solutions that meet the demands of today's wireless communication systems. Experience the power and reliability of the MRF5S19060MR1 and take your wireless applications to new heights.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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