MRF6S19140HR3 Product Introduction:
NXP USA Inc. Part Number MRF6S19140HR3(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF6S19140HR3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF6S19140HR3, the latest innovation from NXP USA Inc. This high-power RF transistor is designed to deliver exceptional performance and reliability in a wide range of applications. With its advanced technology and robust construction, the MRF6S19140HR3 is the perfect solution for demanding RF power amplification requirements.
One of the key features of the MRF6S19140HR3 is its high power output capability. With a maximum output power of 140 watts, this transistor can handle even the most demanding RF power amplification tasks. Its high efficiency ensures minimal power loss, resulting in improved overall system performance.
The MRF6S19140HR3 also offers excellent linearity, allowing for accurate signal amplification without distortion. This makes it ideal for applications that require precise signal reproduction, such as wireless communication systems and radar systems.
Furthermore, the MRF6S19140HR3 is designed to operate in harsh environments, thanks to its rugged construction and high thermal stability. This ensures reliable performance even in extreme temperature conditions, making it suitable for a wide range of industrial and military applications.
In summary, the MRF6S19140HR3 from NXP USA Inc. is a high-power RF transistor that offers exceptional performance, reliability, and versatility. With its advanced features and robust design, it is the perfect choice for applications in wireless communication systems, radar systems, industrial equipment, and more. Trust NXP USA Inc. to deliver cutting-edge solutions for your RF power amplification needs.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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