MRF6S21050LR5 Product Introduction:
NXP USA Inc. Part Number MRF6S21050LR5(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF6S21050LR5 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF6S21050LR5, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the MRF6S21050LR5 is the perfect solution for a wide range of applications.
Featuring a frequency range of 2110 to 2170 MHz, this power transistor is specifically designed for use in LTE base stations, small cell systems, and other wireless infrastructure applications. With a power output of up to 50 watts, the MRF6S21050LR5 delivers the performance needed to ensure reliable and efficient communication.
One of the key features of the MRF6S21050LR5 is its high linearity, which allows for the transmission of high-quality signals without distortion. This makes it ideal for applications that require high data rates and low error rates, such as video streaming and data transfer.
Additionally, the MRF6S21050LR5 offers excellent thermal stability, ensuring reliable operation even in harsh environments. Its compact size and easy integration make it a versatile choice for a variety of applications.
In summary, the MRF6S21050LR5 from NXP USA Inc. is a high-performance RF power transistor that offers exceptional power output, efficiency, and linearity. With its wide frequency range and versatile application fields, it is the perfect choice for wireless communication systems, LTE base stations, small cell systems, and more. Trust NXP USA Inc. for your RF power needs.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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