MRF6S21050LSR5 Product Introduction:
NXP USA Inc. Part Number MRF6S21050LSR5(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF6S21050LSR5 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF6S21050LSR5, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the MRF6S21050LSR5 is the perfect solution for a wide range of applications.
Featuring a frequency range of 2110 to 2170 MHz, this power transistor delivers an impressive output power of 50 watts, making it ideal for use in cellular base stations, repeaters, and other wireless infrastructure equipment. Its high gain and low distortion characteristics ensure reliable and clear signal transmission, even in challenging environments.
The MRF6S21050LSR5 is built using NXP's advanced LDMOS technology, which provides excellent thermal stability and ruggedness. This ensures long-term reliability and performance, even under extreme operating conditions. Additionally, the transistor's compact size and low thermal resistance make it easy to integrate into existing systems, saving both time and cost.
With its exceptional power output, efficiency, and reliability, the MRF6S21050LSR5 is the go-to choice for wireless communication system designers. Whether you're working on cellular infrastructure, wireless broadband, or other high-power RF applications, this power transistor will exceed your expectations.
Trust NXP USA Inc. to deliver cutting-edge solutions for your RF power needs. Experience the power of the MRF6S21050LSR5 and take your wireless communication systems to new heights.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
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