MRF8S23120HSR5 Product Introduction:
NXP USA Inc. Part Number MRF8S23120HSR5(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF8S23120HSR5 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF8S23120HSR5, the latest innovation from NXP USA Inc. This high-power RF transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional performance and reliability, the MRF8S23120HSR5 is set to revolutionize the industry.
Featuring a power output of 120W, this transistor delivers unmatched power and efficiency, ensuring optimal signal transmission and reception. Its high gain and low distortion characteristics make it ideal for a wide range of applications, including cellular base stations, wireless infrastructure, and broadcast systems.
The MRF8S23120HSR5 is built with advanced technology, allowing for seamless integration into existing systems. Its compact size and lightweight design make it easy to install and maintain, saving both time and resources. Additionally, its robust construction ensures long-term durability, even in harsh operating conditions.
With its exceptional performance and versatility, the MRF8S23120HSR5 is the perfect choice for engineers and designers looking to enhance the performance of their wireless communication systems. Whether you're working on a cellular network, a wireless infrastructure project, or a broadcast system, this transistor will exceed your expectations.
Experience the future of wireless communication with the MRF8S23120HSR5 from NXP USA Inc. Trust in our expertise and innovation to take your projects to new heights.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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