MRF8S9170NR3,528 Product Introduction:
NXP USA Inc. Part Number MRF8S9170NR3,528(Transistors - FETs, MOSFETs - Arrays), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF8S9170NR3,528 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the NXP USA Inc. MRF8S9170NR3,528, a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its advanced features and exceptional performance, this transistor is set to become the go-to choice for engineers and designers in the industry.
The MRF8S9170NR3,528 boasts a high power output of 70 Watts, making it ideal for applications that require a strong and reliable signal transmission. Its excellent linearity ensures minimal distortion, resulting in clear and crisp communication. Additionally, this transistor operates at a frequency range of 860-960 MHz, making it compatible with a wide range of wireless communication systems.
One of the standout features of the MRF8S9170NR3,528 is its high efficiency, which translates to reduced power consumption and improved overall system performance. This not only benefits end-users by extending battery life but also contributes to a greener and more sustainable future.
The MRF8S9170NR3,528 finds its application in various fields, including cellular base stations, wireless infrastructure, and industrial, scientific, and medical (ISM) applications. Its versatility and reliability make it an excellent choice for both indoor and outdoor communication systems.
In conclusion, the NXP USA Inc. MRF8S9170NR3,528 is a game-changing RF power transistor that offers exceptional performance, high efficiency, and compatibility with a wide range of wireless communication systems. With its advanced features and application versatility, this transistor is set to redefine the standards of wireless communication.
FETs and MOSFET arrays (FETS, MOSFETs-Arrays) are composed of multiple Field-Effect transistors. FET) or Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an integrated circuit module. This array design provides high power processing capabilities while maintaining good thermal management and control characteristics. An FET or MOSFET array typically includes multiple transistors that can be connected in series, parallel, or in combination to meet specific current and voltage requirements.
Application
FETs and MOSFET Arrays (FETs, MOSFETs) are widely used in various fields. In the field of communication, they are widely used in key components such as RF front ends, signal amplifiers and filters to improve the transmission efficiency and signal quality of communication systems. In the computer field, FET and MOSFET array as an important part of CPU, GPU and other core processors, assume the key role of data processing and computing tasks. In addition, in automotive electronics, industrial automation, medical equipment and other fields, FET and MOSFET arrays also play an important role, such as for motor drive control, power management, sensor signal processing and so on.
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