MRF8VP13350NR3 Product Introduction:
NXP USA Inc. Part Number MRF8VP13350NR3(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MRF8VP13350NR3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the MRF8VP13350NR3, the latest innovation from NXP USA Inc. This high-power RF transistor is designed to deliver exceptional performance and reliability in a wide range of applications. With its advanced technology and cutting-edge features, the MRF8VP13350NR3 is set to revolutionize the RF industry.
One of the standout features of the MRF8VP13350NR3 is its impressive power output. With a maximum output power of 350W, this transistor is capable of handling high-power RF signals with ease. This makes it ideal for applications that require a high level of power, such as radar systems, broadcast transmitters, and industrial heating equipment.
In addition to its power capabilities, the MRF8VP13350NR3 also offers excellent efficiency and linearity. This means that it can deliver high-quality RF signals while minimizing distortion and power consumption. This makes it a perfect choice for applications that require both power and signal integrity, such as wireless communication systems and satellite transponders.
Furthermore, the MRF8VP13350NR3 is designed to withstand harsh operating conditions. It features a rugged construction and excellent thermal management, ensuring reliable performance even in extreme environments. This makes it suitable for applications in aerospace, defense, and industrial sectors.
With its exceptional power output, efficiency, and reliability, the MRF8VP13350NR3 is set to become the go-to choice for high-power RF applications. Trust NXP USA Inc. to deliver cutting-edge technology that meets your needs and exceeds your expectations.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
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