MS1006

Microsemi Corporation MS1006

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  • MS1006
  • Microsemi Corporation
  • RF TRANS NPN 55V 30MHZ M135
  • Transistors - Bipolar (BJT) - RF
  • MS1006 Datasheet
  • M135
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25195
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
MS1006
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Microsemi Corporation
Description
RF TRANS NPN 55V 30MHZ M135
Package
Bulk
Series
-
Operating Temperature
200°C
Mounting Type
Stud Mount
Package / Case
M135
Supplier Device Package
M135
Gain
14dB
Power - Max
127W
Transistor Type
NPN
Current - Collector (Ic) (Max)
3.25A
Voltage - Collector Emitter Breakdown (Max)
55V
DC Current Gain (hFE) (Min) @ Ic, Vce
19 @ 1.4A, 6V
Frequency - Transition
30MHz
Noise Figure (dB Typ @ f)
-
Package_case
M135

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Microsemi Corporation
Microsemi Corporation
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