Microsemi Corporation MS1006
- MS1006
- Microsemi Corporation
- RF TRANS NPN 55V 30MHZ M135
- Transistors - Bipolar (BJT) - RF
- MS1006 Datasheet
- M135
- Bulk
- Lead free / RoHS Compliant
- 25195
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MS1006 |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Microsemi Corporation |
Description RF TRANS NPN 55V 30MHZ M135 |
Package Bulk |
Series - |
Operating Temperature 200°C |
Mounting Type Stud Mount |
Package / Case M135 |
Supplier Device Package M135 |
Gain 14dB |
Power - Max 127W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 3.25A |
Voltage - Collector Emitter Breakdown (Max) 55V |
DC Current Gain (hFE) (Min) @ Ic, Vce 19 @ 1.4A, 6V |
Frequency - Transition 30MHz |
Noise Figure (dB Typ @ f) - |
Package_case M135 |
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