Toshiba Semiconductor and Storage MT3S111TU,LF
- MT3S111TU,LF
- Toshiba Semiconductor and Storage
- RF SIGE NPN BIPOLAR TRANSISTOR N
- Transistors - Bipolar (BJT) - RF
- MT3S111TU,LF Datasheet
- 3-SMD, Flat Lead
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1486
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MT3S111TU,LF |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Toshiba Semiconductor and Storage |
Description RF SIGE NPN BIPOLAR TRANSISTOR N |
Package Jinftry-Reel® |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-SMD, Flat Lead |
Supplier Device Package UFM |
Gain 12.5dB |
Power - Max 800mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 6V |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V |
Frequency - Transition 10GHz |
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
Package_case 3-SMD, Flat Lead |
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