MT3S113TU,LF

Toshiba Semiconductor and Storage MT3S113TU,LF

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  • MT3S113TU,LF
  • Toshiba Semiconductor and Storage
  • RF TRANS NPN 5.3V 11.2GHZ UFM
  • Transistors - Bipolar (BJT) - RF
  • MT3S113TU,LF Datasheet
  • 3-SMD, Flat Lead
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2600
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
MT3S113TU,LF
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Toshiba Semiconductor and Storage
Description
RF TRANS NPN 5.3V 11.2GHZ UFM
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Supplier Device Package
UFM
Gain
12.5dB
Power - Max
900mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Frequency - Transition
11.2GHz
Noise Figure (dB Typ @ f)
1.45dB @ 1GHz
Package_case
3-SMD, Flat Lead

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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