Toshiba Semiconductor and Storage MT3S113TU,LF
- MT3S113TU,LF
- Toshiba Semiconductor and Storage
- RF TRANS NPN 5.3V 11.2GHZ UFM
- Transistors - Bipolar (BJT) - RF
- MT3S113TU,LF Datasheet
- 3-SMD, Flat Lead
- Bulk
- Lead free / RoHS Compliant
- 2600
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MT3S113TU,LF |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Toshiba Semiconductor and Storage |
Description RF TRANS NPN 5.3V 11.2GHZ UFM |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-SMD, Flat Lead |
Supplier Device Package UFM |
Gain 12.5dB |
Power - Max 900mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 5.3V |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V |
Frequency - Transition 11.2GHz |
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz |
Package_case 3-SMD, Flat Lead |
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