Micron Technology Inc. MT54V512H18EF-10
- MT54V512H18EF-10
- Micron Technology Inc.
- IC SRAM 9MBIT PARALLEL 165FBGA
- Memory
- MT54V512H18EF-10 Datasheet
- 165-TBGA
- Bulk
- Lead free / RoHS Compliant
- 14433
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MT54V512H18EF-10 |
Category Memory |
Manufacturer Micron Technology Inc. |
Description IC SRAM 9MBIT PARALLEL 165FBGA |
Package Bulk |
Series QDR™ |
Voltage - Supply 2.4V ~ 2.6V |
Operating Temperature 0°C ~ 70°C (TA) |
Mounting Type Surface Mount |
Package / Case 165-TBGA |
Supplier Device Package 165-FBGA (13x15) |
Memory Size 9Mb (512K x 18) |
Technology SRAM - Quad Port, Synchronous |
Memory Type Volatile |
Clock Frequency 100 MHz |
Access Time - |
Memory Format SRAM |
Write Cycle Time - Word, Page - |
Memory Interface Parallel |
Package_case 165-TBGA |
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