GeneSiC Semiconductor MURTA20060
- MURTA20060
- GeneSiC Semiconductor
- DIODE GEN PURP 600V 100A 3 TOWER
- Diodes - Rectifiers - Arrays
- MURTA20060 Datasheet
- Three Tower
- Bulk
-
Lead free / RoHS Compliant
- 27459
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MURTA20060 |
Category Diodes - Rectifiers - Arrays |
Manufacturer GeneSiC Semiconductor |
Description DIODE GEN PURP 600V 100A 3 TOWER |
Package Bulk |
Series - |
Mounting Type Chassis Mount |
Package / Case Three Tower |
Supplier Device Package Three Tower |
Diode Type Standard |
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 100 A |
Current - Reverse Leakage @ Vr 25 µA @ 600 V |
Diode Configuration 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) 600 V |
Current - Average Rectified (Io) (per Diode) 100A |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -55°C ~ 150°C |
Package_case Three Tower |
MURTA20060 Guarantees
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