MURTA600120

GeneSiC Semiconductor MURTA600120

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  • MURTA600120
  • GeneSiC Semiconductor
  • DIODE GEN 1.2KV 300A 3 TOWER
  • Diodes - Rectifiers - Arrays
  • MURTA600120 Datasheet
  • Three Tower
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2936
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
MURTA600120
Category
Diodes - Rectifiers - Arrays
Manufacturer
GeneSiC Semiconductor
Description
DIODE GEN 1.2KV 300A 3 TOWER
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
Three Tower
Supplier Device Package
Three Tower
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
2.6 V @ 300 A
Current - Reverse Leakage @ Vr
25 µA @ 1200 V
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
300A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
Three Tower

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