ON Semiconductor NDD60N550U1-1G
- NDD60N550U1-1G
- ON Semiconductor
- MOSFET N-CH 600V 8.2A IPAK
- Transistors - FETs, MOSFETs - Single
- NDD60N550U1-1G Datasheet
- TO-251-3 Short Leads, IPak, TO-251AA
- Bulk
- Lead free / RoHS Compliant
- 1001
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NDD60N550U1-1G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 600V 8.2A IPAK |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package I-Pak |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 94W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 8.2A (Tc) |
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V |
Vgs (Max) ±25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-251-3 Short Leads, IPak, TO-251AA |
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