ON Semiconductor NGTD23T120F2WP
- NGTD23T120F2WP
- ON Semiconductor
- IGBT TRENCH FIELD STOP 1200V DIE
- Transistors - IGBTs - Single
- NGTD23T120F2WP Datasheet
- Die
- Bulk
- Lead free / RoHS Compliant
- 22727
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number NGTD23T120F2WP |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT TRENCH FIELD STOP 1200V DIE |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Power - Max - |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A |
Gate Charge - |
Td (on/off) @ 25°C - |
Test Condition - |
Current - Collector Pulsed (Icm) 120 A |
Switching Energy - |
Package_case Die |
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