Renesas Electronics America Inc NP33N06YDG-E1-AY
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- NP33N06YDG-E1-AY
- Renesas Electronics America Inc
- MOSFET N-CH 60V 33A 8HSON
- Transistors - FETs, MOSFETs - Single
- NP33N06YDG-E1-AY Datasheet
- 8-SMD, Flat Lead Exposed Pad
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 22852
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number NP33N06YDG-E1-AY |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Renesas Electronics America Inc |
| Description MOSFET N-CH 60V 33A 8HSON |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SMD, Flat Lead Exposed Pad |
| Supplier Device Package 8-HSON |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1W (Ta), 97W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 33A (Tc) |
| Rds On (Max) @ Id, Vgs 14mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 5V, 10V |
| Package_case 8-SMD, Flat Lead Exposed Pad |
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