Renesas Electronics America Inc NP80N04PUG-E1B-AY
- NP80N04PUG-E1B-AY
- Renesas Electronics America Inc
- MOSFET N-CH 40V 80A TO263
- Transistors - FETs, MOSFETs - Single
- NP80N04PUG-E1B-AY Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4862
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NP80N04PUG-E1B-AY |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Renesas Electronics America Inc |
Description MOSFET N-CH 40V 80A TO263 |
Package Cut Tape (CT) |
Series - |
Operating Temperature 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta), 115W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7350 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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