ON Semiconductor NVB190N65S3
- NVB190N65S3
- ON Semiconductor
- MOSFET N-CH 650V 20A D2PAK-3
- Transistors - FETs, MOSFETs - Single
- NVB190N65S3 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
- Lead free / RoHS Compliant
- 2600
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NVB190N65S3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 650V 20A D2PAK-3 |
Package Bulk |
Series Automotive, AEC-Q101, SuperFET® III |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK-3 (TO-263-3) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 162W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 20A (Tc) |
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 5V @ 430µA |
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1605 pF @ 400 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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