NVD6416ANLT4G

Fairchild Semiconductor NVD6416ANLT4G

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  • NVD6416ANLT4G
  • Fairchild Semiconductor
  • MOSFET N-CH 100V 19A DPAK
  • Transistors - FETs, MOSFETs - Single
  • NVD6416ANLT4G Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 11512
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
NVD6416ANLT4G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 100V 19A DPAK
Package
Bulk
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
71W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Rds On (Max) @ Id, Vgs
74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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